Kelin J. Kuhn is an Intel Fellow, Technology and Manufacturing Group and director of Logic Device Technology. Kuhn is the device lead of the pathfinding team. Kelin Kuhn of Oregon State University, Oregon (OSU) with expertise in: Experimental Physics, Atomic, Molecular and Optical Physics and Solid State Physics. Dr. Kuhn received her B.S. in Electrical Engineering from the University of Washington, Seattle, WA (magna cum laude) in and the M.S. and Ph.D. in.
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Withoutabox Submit to Film Festivals. She has been involved in Intel’s manufacturing process technology development for several generations of process technology including Intel’s 45nm process technology.
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Methods of forming low band gap source and drain structures in microelectronic devices. Sign Up for our Newsletter. For example, a nanowire relay includes a nanowire disposed in a void disposed above a substrate.
Learn more at Author Central. Kuhn kepin the device lead for Intel’s 45nm process, which uses Hi-K metal gate transistors and represents the most significant change in transistor architecture in the past 40 years.
Kelin J. Kuhn – Engineering and Technology History Wiki
High to Low Avg. She has five patents with five others pending and is the author of more than 60 technical papers and klein textbook. In at least one embodiment, the present disclosure relates to forming isolation structures in strained semiconductor bodies of non-planar transistors while maintaining strain in the semiconductor bodies.
After hearing an Oregon neurologist lecture on the power of learning a musical instrument to keep the brain sharp, Kuhn was intrigued. Learn more about Amazon Prime. She received her master’s and doctoral degrees in electrical engineering from Stanford University in So the class was created to illustrate this, involving companies and consumer products of that era such as VCRs, DVD players and tape recorders — often obtained from local pawn shops.
Amazon Inspire Digital Educational Resources. Kuhn earned her bachelor’s degree in electrical engineering from the University of Washington in The present disclosure relates to the field of fabricating microelectronic devices.
Kelin Kuhn named Intel Fellow
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AmazonGlobal Ship Orders Internationally. The source region or the drain region, or combinations thereof, comprise a metal layer formed on the substantially all of the first side surface, substantially all of the second side surface, and the top surface.
Nanowire transistor with underlayer etch stops. Nanowire-based mechanical switching devices are described. The underlayer etch stop may prevent damage to the source structures andor drain the structures, when the material used in the fabrication of the source structures andor the drain structures is susceptible to being etched by the processes used in the removal of the sacrificial materials, i.
That experience largely dropped out of the culture by oelin time she started her faculty position in due to the widespread use of integrated circuits, which made the underlying technology all but invisible.
Previously, Kuhn was a tenured faculty member in the Department of Electrical and Computer Engineering at the University of Washington.
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Methods and apparatus to reduce layout based strain variations in non-planar transistor structures. The nanowire has an anchored portion and a suspended portion.
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Only 3 left in stock – order soon. Nanowire transistor fabrication with hardmask layers. The first side surface is opposite the second side surface, the top surface is opposite the bottom surface.
Kelin Kuhn named Intel Fellow | UW Department of Electrical & Computer Engineering
Amazon Renewed Refurbished products with a warranty. A semiconductor device comprises a substrate and a semiconductor body formed khn the substrate. Giles, Kelin Kuhn, Jack T.