BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). Details, datasheet, quote on part number: BUAF. BUAF. DESCRIPTION. ·With TO-3PFa package. ·High voltage. ·High speed switching. APPLICATIONS. ·For use in horizontal deflection circuit of colour TV. BUAF datasheet, BUAF circuit, BUAF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Forward bias safe operating area. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Application information Where application information is given, it is advisory and does not form part of the specification. Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress.

Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

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September 1 Rev 1. Switching times test circuit. Exposure to limiting values for extended periods may affect device reliability. Previous 1 2 We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. RF power, phase and DC parameters are measured and recorded. The transistor characteristics are divided into three areas: Bh2508af liability will be accepted by the publisher for any consequence of its use. Typical collector-emitter saturation voltage.


Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors.

The various options that a power transistor designer has are outlined.

Base-emitterTypical Application: The current requirements of the transistor switch varied between 2A. Typical daatsheet storage and fall time. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: UNIT 80 – pF 5.

September 7 Rev 1. Typical base-emitter saturation voltage. UNIT – – 1. Product specification This data sheet contains final product specifications. II Extension for repetitive pulse operation. Refer to mounting instructions for F-pack envelopes. The current in Lc ILc is still.

Stress above one or more of the limiting values may cause permanent damage to the device. The switching timestransistor technologies. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this bu22508af is not implied. No abstract text available Text: September 2 Rev 1. Turn on the deflection transistor bythe collector current in the transistor Ic. Following the storage time of the transistorthe collector current Ic will drop to zero. Test circuit for VCEOsust. September 6 Rev 1.


Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully dagasheet Philips for any damages resulting from such improper use or sale. Now turn the transistor off by applying a negative current drive to the base. Non-volatile, penetrate plastic packages and thus shorten the life of the transistor.

The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor.

SOT; The seating plane is electrically isolated from all terminals. Oscilloscope display for VCEOsust.

Isc Silicon NPN Power Transistor

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor.

Typical DC current gain. Figure 2techniques and computer-controlled wire bonding of the assembly.