BD131 DATASHEET PDF

BD Transistor Datasheet pdf, BD Equivalent. Parameters and Characteristics. BD BD; NPN Power Transistor. FEATURES High current (max. 3 A) Low voltage (max. 45 V). APPLICATIONS General purpose power applications. BD datasheet, BD circuit, BD data sheet: PHILIPS – NPN power transistor,alldatasheet, datasheet, Datasheet search site for Electronic Components.

Author: Mugore Yozshurisar
Country: Rwanda
Language: English (Spanish)
Genre: Art
Published (Last): 27 March 2005
Pages: 17
PDF File Size: 18.98 Mb
ePub File Size: 15.97 Mb
ISBN: 147-6-59625-354-8
Downloads: 86245
Price: Free* [*Free Regsitration Required]
Uploader: Vunris

BD131 NPN Power Transistor

No abstract text available Text: Lock ‘A’ of bx131 centre lead will now enter the hole Fig. E AV I, max. Transistors may be dip soldered at a solder temperature of C for a maximum of 10 seconds up to a point 2mm from the seal. Example hi Ehi B The four pole matrix parameters of the device are represented by lower case symbols with the appropriate subscripts h ib The four pole matrix parameters of external circuits and of circuits in which the datasheft forms only a small part are represented by upper case symbols with the appropriate subscripts.

BTWR Silicon thyristor for ‘industrial’ applications. The thermal capacity of the datassheet will be such that the transient effect of the power will be averaged. Under these circumstances the leads should be re-tinned using an activated flux. Instantaneous value of varying component of emitter current. To measure Vbe, the sensor is switched betweentemperature measurement takes nominally 9.

The definitions of the three systems accepted by the International Electro- technical Commission are as follows: Published curves are usually typical curves and are applicable only at the stated temperature. A — diode or rectifier C — transistor AP — photodiode CP — phototransistor A’Z — voltage bd1331 diode The group of figures is a serial number indicating a particular design or develop- ment.

  JBL 4632 PDF

Devices in this Data Sheet should be ordered by the type number followed by Reference If the application condition just exceeds the selected SOAR curve, then dqtasheet interpol- ation between the family of curves used and the next lower duty cycle curves. The various components of the rise of junction temperature above ambient are illustrated below: TO -A- f B. BE sat decreases by about 1.

Rectangular dxtasheet sides a and 2a When mounted with long side horizontal, multiply by 0. Thermal resistance from junction to th j-a 25 V 15 V 18 V 10 V 1. In general, the data provides SOAR curves for pulse durations in multiples of 1, 2, 5, and 10, starting at pulse durations in the region 10 to 50,us. The transistor has a very low feedback capacitance and is primarily intended for use in the output stage of television video i.

On the horizontal axis the forward and reverse-biased base regions are clearly grouped, with the base open-circuit condition dividing the two regions. If a PNP transistor is used the base is.

BD131 Datasheet, Equivalent, Cross Reference Search

Encapsulated in darasheet TO -3 envelope. V decreasesby approximately 2. If the point lies outside this area the design is inadmissible and the dissipation must be reduced or the heatsink improved. Temperature Fig 3 The temperature may be ambient, case or mounting base temperatures.

PG1N’s HAM Radio Site – Transistors BD-Serie – BD

OmWs, provided it is cut-off with V. The letter X is used as a third subscript to denote measurements taken under specified circuit conditions. These devices feature very lowtransistors. In this example the Bx131 acceptability is considered in the event of the transis- tors being overdriven by a sinewave signal of period jj.

  ISACCO AGOSTONI PDF

The transistor has a very low feedback capacitance and is intended for use in the forward gain control stage of the television i. In BTW24 range with V maximum repetitive peak voltage, reverse polarity, stud connected to anode. The maximum permissible instantaneous value of the total base current.

Encapsulated in TO plastic envelope. Collector Cutoff Region Figure 6.

CM I n max. If a discrete transistor is used, the collector will not be. Older devices on which data may still be obtained on request are also included in the index of the appropriate part of each book. The base of the transistor is connected to the metal envelope. The equation used is: Intended for general purpose applications in 1. The maximum total dissipation, P. The second and third letter s indicate the general class of device: SOAR limits are exceeded. The reference terminal may then be designated by the third subscript.

Input impedance le Voltage feedback ratio Small signal current gain Output admittance min. TO Collector connected to the metal part of the mounting surface Torque on nut: Peak value of the varying component of the emitter current.