2SK datasheet, 2SK pdf, 2SK data sheet, datasheet, data sheet, pdf, TOSHIBA, 2SK 2SK Datasheet PDF Download – N-Channel MOSFET Transistor, 2SK data sheet. Toshiba Semiconductor K datasheet, 2SK (1-page), K datasheet, K pdf, K datasheet pdf, K pinouts.
|Published (Last):||21 November 2011|
|PDF File Size:||6.72 Mb|
|ePub File Size:||12.2 Mb|
|Price:||Free* [*Free Regsitration Required]|
Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages. Register Log in Shopping cart 0 You have no items in your shopping cart. The new type of capacitor has a space-saving design with two, three or even ten identical capacitors connected in parallel on the same terminal to 2ks792 the capacitance. Specifications Contact Us Ordering Guides.
The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.
2SK MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Gate threshold voltage Vgs th. STMicroelectronics’ two new microcontroller product lines enhance the energy efficiency, functional integration and design flexibility of the STM32F4 basic product line high-end products to meet the technical requirements of high-performance embedded design. The Field-Effect Transistor FET is a transistor that uses an electric field to 2sk729 the shape and hence the conductivity of a channel of one type of 2sm792 carrier in a semiconductor material.
FETs are unipolar transistors as they involve single-carrier-type operation. Please review product page below for detailed information, including ASBQFT price, datasheets, in-stock availability, technical difficulties.
Quickly Enter the access of compare list to find replaceable electronic parts. Produst description The Field-Effect Transistor FET is a transistor that uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material.
Datasheet archive on 15-8-2005
Drain – Source Voltage Vdss. Because these two terminals are normally connected to each other short-circuited internally, only three terminals appear in electrical diagrams.
Drain-Source resistance Rds-on max. Want to gain comprehensive data for ASBQFT to optimize the supply chain include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecastsplease contact to our Tech-supports team.
(PDF) 2SK792 Datasheet download
It shares with the IGBT an isolated gate that makes it easy to drive. Please log in to request free sample. N-channel silicon junction field-effect transistors.